Lin Li assists the Electrical & Computer Technologies Group in patent prosecution. Her areas of experience include bioelectronics, display technologies, memory technologies, nanofabrication and semiconductor devices, sensors and instrumentation, augmented and virtual reality, and software.

Prior to joining Wolf Greenfield, Lin was a process integration engineer at Micron Technology, Inc., where she evaluated and implemented creative solutions that improved product performance, yield and reliability. In addition, she coordinated engineers from various areas (e.g., process engineer, failure analysis engineers and product engineers) to develop the next generation of memory technology.

During graduate study, Lin spent time at both the Device Characterization Laboratory of HKUST and the Nanostructure Devices and Technology Laboratory of UCLA. She worked on multiple research projects, which covered a wide range of technologies, including novel memory systems mono-lithographically integrated on display panels, sensors, biomedical electronics and computer-aided simulations. She has experience designing electronic systems with EDA tools, manufacturing in nanofabrication facilities and characterizing electronic systems.
  • Best Paper Award at IEEE Conference on Electron Devices and Solid-State Circuits (2008)


Scientific Publications

W. Kueber, L. Li, et al., “A highly reliable and cost effective 16nm Planar NAND cell technology”, in 7th International Memory Workshop, 2015.

L. Li et al., “Enabling 16nm TLC NAND using Monte Carlo modeling”, in 2014 Micron Technology Process R&D Technical Seminar, 2014.

J. He, W.T. Chan, C. Wang, H. Lou, R. Wang, L. Li, et al., “ A compact CMOS compatible oxide antifuse with polysilicon diode driver,” IEEE Transactions on Electron Devices, 2012.

L. Li et al., “Phase-change memory with multi-fin thin-film-transistor driver technology,” IEEE Electron Device Letters, 2012.

J.K.Y. Law, C.K. Yeung, L. Li, et al., “The use of SU-8 topographical guided microelectrode array in measuring extracellular field potential propagation,” Annals of Biomedical Engineering, 2012.

L. Li et al., “One-time-programmable memory in LTPS TFT technology with metal induced lateral crystallization,” IEEE Transactions on Electron Devices, 2012.

L. Zhang, L. Li, et al., “Modeling short channel effect of elliptical gate-all-around MOSFET by effective radius,” IEEE Electron Device Letters, 2011.

L. Li et al., “Driving device comparison for phase-change memory,” IEEE Transactions on Electron Devices, 2011.

L. Li et al., “Phase-change memory on thin-film-transistor technology,” in International Semiconductor Device Research Symposium, 2011.

L. Zhang, J. He, C. Ma, X. Zhou, W. Bian, L. Li, et al., “An oxide/silicon core/shell nanowire FET”, in IEEE Nano, 2011.

L. Li and M. Chan, “Submicron MILC TFT performance enhancement by crystallization after patterning”, in IEEE Conference on Electron Devices and Solid-State Circuits, 2010.

L. Li and M. Chan (Best Paper Award), “Scaling analysis of phase change memory (PCM) driving devices,” in IEEE conference on Electron Devices and Solid-State Circuits, 2008.

W.T. Chan, K.P. Ng, M.C. Lee, K.C. Kwong, L. Li, et al., “CMOS-compatible zero-mask one time programmable (OTP) memory design”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.

K.C. Kwong, L. Li, et al., “Verilog-A model for phase change memory simulation”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.

L. Li et al., “Comparison of PN diodes and FETs as phase change memory (PCM) driving devices”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.


Expand All

Lin Li assists the Electrical & Computer Technologies Group in patent prosecution. Her areas of experience include bioelectronics, display technologies, memory technologies, nanofabrication and semiconductor devices, sensors and instrumentation, augmented and virtual reality, and software.

Prior to joining Wolf Greenfield, Lin was a process integration engineer at Micron Technology, Inc., where she evaluated and implemented creative solutions that improved product performance, yield and reliability. In addition, she coordinated engineers from various areas (e.g., process engineer, failure analysis engineers and product engineers) to develop the next generation of memory technology.

During graduate study, Lin spent time at both the Device Characterization Laboratory of HKUST and the Nanostructure Devices and Technology Laboratory of UCLA. She worked on multiple research projects, which covered a wide range of technologies, including novel memory systems mono-lithographically integrated on display panels, sensors, biomedical electronics and computer-aided simulations. She has experience designing electronic systems with EDA tools, manufacturing in nanofabrication facilities and characterizing electronic systems.
  • Best Paper Award at IEEE Conference on Electron Devices and Solid-State Circuits (2008)

Scientific Publications

W. Kueber, L. Li, et al., “A highly reliable and cost effective 16nm Planar NAND cell technology”, in 7th International Memory Workshop, 2015.

L. Li et al., “Enabling 16nm TLC NAND using Monte Carlo modeling”, in 2014 Micron Technology Process R&D Technical Seminar, 2014.

J. He, W.T. Chan, C. Wang, H. Lou, R. Wang, L. Li, et al., “ A compact CMOS compatible oxide antifuse with polysilicon diode driver,” IEEE Transactions on Electron Devices, 2012.

L. Li et al., “Phase-change memory with multi-fin thin-film-transistor driver technology,” IEEE Electron Device Letters, 2012.

J.K.Y. Law, C.K. Yeung, L. Li, et al., “The use of SU-8 topographical guided microelectrode array in measuring extracellular field potential propagation,” Annals of Biomedical Engineering, 2012.

L. Li et al., “One-time-programmable memory in LTPS TFT technology with metal induced lateral crystallization,” IEEE Transactions on Electron Devices, 2012.

L. Zhang, L. Li, et al., “Modeling short channel effect of elliptical gate-all-around MOSFET by effective radius,” IEEE Electron Device Letters, 2011.

L. Li et al., “Driving device comparison for phase-change memory,” IEEE Transactions on Electron Devices, 2011.

L. Li et al., “Phase-change memory on thin-film-transistor technology,” in International Semiconductor Device Research Symposium, 2011.

L. Zhang, J. He, C. Ma, X. Zhou, W. Bian, L. Li, et al., “An oxide/silicon core/shell nanowire FET”, in IEEE Nano, 2011.

L. Li and M. Chan, “Submicron MILC TFT performance enhancement by crystallization after patterning”, in IEEE Conference on Electron Devices and Solid-State Circuits, 2010.

L. Li and M. Chan (Best Paper Award), “Scaling analysis of phase change memory (PCM) driving devices,” in IEEE conference on Electron Devices and Solid-State Circuits, 2008.

W.T. Chan, K.P. Ng, M.C. Lee, K.C. Kwong, L. Li, et al., “CMOS-compatible zero-mask one time programmable (OTP) memory design”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.

K.C. Kwong, L. Li, et al., “Verilog-A model for phase change memory simulation”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.

L. Li et al., “Comparison of PN diodes and FETs as phase change memory (PCM) driving devices”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.