Lin Li focuses on patent practice, including patent prosecution, supporting pre-litigation invalidity and infringement analyses, supporting patent litigation in Section 337 investigations at the U.S. International Trade Commission (ITC), and supporting post-grant proceedings before the Patent Trial and Appeal Board (PTAB) of the U.S. Patent and Trademark Office (USPTO).  Lin also has experience supporting post-grant proceedings before the China National Intellectual Property Administration (CNIPA).  She has significant experience in a wide range of technologies, including augmented and virtual reality, biomedical technologies, semiconductor devices, and telecommunication technologies.

While in law school, Lin was a member of George Mason Law School’s team to participate in the Giles Sutherland Rich Memorial Moot Court Competition.  Prior to joining Wolf Greenfield, Lin has both industry and academic experience.  She worked as an engineer at the R&D department of Micron Technology.  During graduate study, Lin spent time at both the Device Characterization Laboratory of HKUST and the Nanostructure Devices and Technology Laboratory of UCLA, where she designed, simulated, fabricated, and characterized semiconductor devices and circuits.

  • Federal Circuit Bar Association
  • The Pauline Newman IP American Inn of Court
  • Best Paper Award at IEEE Conference on Electron Devices and Solid-State Circuits (2008)


Scientific Publications

  • W. Kueber, L. Li, et al., “A highly reliable and cost effective 16nm Planar NAND cell technology”, in 7th International Memory Workshop, 2015.
  • L. Li et al., “Enabling 16nm TLC NAND using Monte Carlo modeling”, in 2014 Micron Technology Process R&D Technical Seminar, 2014.
  • J. He, W.T. Chan, C. Wang, H. Lou, R. Wang, L. Li, et al., “ A compact CMOS compatible oxide antifuse with polysilicon diode driver,” IEEE Transactions on Electron Devices, 2012.
  • L. Li et al., “Phase-change memory with multi-fin thin-film-transistor driver technology,” IEEE Electron Device Letters, 2012.
  • J.K.Y. Law, C.K. Yeung, L. Li, et al., “The use of SU-8 topographical guided microelectrode array in measuring extracellular field potential propagation,” Annals of Biomedical Engineering, 2012.
  • L. Li et al., “One-time-programmable memory in LTPS TFT technology with metal induced lateral crystallization,” IEEE Transactions on Electron Devices, 2012.
  • L. Zhang, L. Li, et al., “Modeling short channel effect of elliptical gate-all-around MOSFET by effective radius,” IEEE Electron Device Letters, 2011.
  • L. Li et al., “Driving device comparison for phase-change memory,” IEEE Transactions on Electron Devices, 2011.
  • L. Li et al., “Phase-change memory on thin-film-transistor technology,” in International Semiconductor Device Research Symposium, 2011.
  • L. Zhang, J. He, C. Ma, X. Zhou, W. Bian, L. Li, et al., “An oxide/silicon core/shell nanowire FET”, in IEEE Nano, 2011.
  • L. Li and M. Chan, “Submicron MILC TFT performance enhancement by crystallization after patterning”, in IEEE Conference on Electron Devices and Solid-State Circuits, 2010.
  • L. Li and M. Chan (Best Paper Award), “Scaling analysis of phase change memory (PCM) driving devices,” in IEEE conference on Electron Devices and Solid-State Circuits, 2008.
  • W.T. Chan, K.P. Ng, M.C. Lee, K.C. Kwong, L. Li, et al., “CMOS-compatible zero-mask one time programmable (OTP) memory design”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.
  • K.C. Kwong, L. Li, et al., “Verilog-A model for phase change memory simulation”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.
  • L. Li et al., “Comparison of PN diodes and FETs as phase change memory (PCM) driving devices”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.

Lin enjoys contributing to STEM education for the next generation. Lin also enjoys outdoor activities such as hiking and bicycling. 

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Lin Li focuses on patent practice, including patent prosecution, supporting pre-litigation invalidity and infringement analyses, supporting patent litigation in Section 337 investigations at the U.S. International Trade Commission (ITC), and supporting post-grant proceedings before the Patent Trial and Appeal Board (PTAB) of the U.S. Patent and Trademark Office (USPTO).  Lin also has experience supporting post-grant proceedings before the China National Intellectual Property Administration (CNIPA).  She has significant experience in a wide range of technologies, including augmented and virtual reality, biomedical technologies, semiconductor devices, and telecommunication technologies.

While in law school, Lin was a member of George Mason Law School’s team to participate in the Giles Sutherland Rich Memorial Moot Court Competition.  Prior to joining Wolf Greenfield, Lin has both industry and academic experience.  She worked as an engineer at the R&D department of Micron Technology.  During graduate study, Lin spent time at both the Device Characterization Laboratory of HKUST and the Nanostructure Devices and Technology Laboratory of UCLA, where she designed, simulated, fabricated, and characterized semiconductor devices and circuits.

  • Federal Circuit Bar Association
  • The Pauline Newman IP American Inn of Court
  • Best Paper Award at IEEE Conference on Electron Devices and Solid-State Circuits (2008)

Scientific Publications

  • W. Kueber, L. Li, et al., “A highly reliable and cost effective 16nm Planar NAND cell technology”, in 7th International Memory Workshop, 2015.
  • L. Li et al., “Enabling 16nm TLC NAND using Monte Carlo modeling”, in 2014 Micron Technology Process R&D Technical Seminar, 2014.
  • J. He, W.T. Chan, C. Wang, H. Lou, R. Wang, L. Li, et al., “ A compact CMOS compatible oxide antifuse with polysilicon diode driver,” IEEE Transactions on Electron Devices, 2012.
  • L. Li et al., “Phase-change memory with multi-fin thin-film-transistor driver technology,” IEEE Electron Device Letters, 2012.
  • J.K.Y. Law, C.K. Yeung, L. Li, et al., “The use of SU-8 topographical guided microelectrode array in measuring extracellular field potential propagation,” Annals of Biomedical Engineering, 2012.
  • L. Li et al., “One-time-programmable memory in LTPS TFT technology with metal induced lateral crystallization,” IEEE Transactions on Electron Devices, 2012.
  • L. Zhang, L. Li, et al., “Modeling short channel effect of elliptical gate-all-around MOSFET by effective radius,” IEEE Electron Device Letters, 2011.
  • L. Li et al., “Driving device comparison for phase-change memory,” IEEE Transactions on Electron Devices, 2011.
  • L. Li et al., “Phase-change memory on thin-film-transistor technology,” in International Semiconductor Device Research Symposium, 2011.
  • L. Zhang, J. He, C. Ma, X. Zhou, W. Bian, L. Li, et al., “An oxide/silicon core/shell nanowire FET”, in IEEE Nano, 2011.
  • L. Li and M. Chan, “Submicron MILC TFT performance enhancement by crystallization after patterning”, in IEEE Conference on Electron Devices and Solid-State Circuits, 2010.
  • L. Li and M. Chan (Best Paper Award), “Scaling analysis of phase change memory (PCM) driving devices,” in IEEE conference on Electron Devices and Solid-State Circuits, 2008.
  • W.T. Chan, K.P. Ng, M.C. Lee, K.C. Kwong, L. Li, et al., “CMOS-compatible zero-mask one time programmable (OTP) memory design”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.
  • K.C. Kwong, L. Li, et al., “Verilog-A model for phase change memory simulation”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.
  • L. Li et al., “Comparison of PN diodes and FETs as phase change memory (PCM) driving devices”, in International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2008.


Lin enjoys contributing to STEM education for the next generation. Lin also enjoys outdoor activities such as hiking and bicycling.